1/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.a 1.2v drive nch + nch mosfet um6k33n ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) high speed switing. 2) small package(umt6). 3) ultra low voltage drive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code tn basic ordering unit (pieces) 3000 um6k33n ? type ? ? ? ? ? ? ? ? ? ? absolute maximum ratings (ta = 25 ? c) ? symbol limits unit drain-source voltage v dss 50 v gate-source voltage v gss ? 8v continuous i d ? 200 ma pulsed i dp ? 800 ma continuous i s 125 ma pulsed i sp 800 ma 150 mw / total 120 mw / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. p d power dissipation source current (body diode) drain current parameter *2 *1 *1 ? ? ? ? thermal resistance ? symbol limits unit 833 c / w /total 1042 c / w /element * each terminal mounted on a recommended land. parameter channel to ambient rth (ch-a) * ? umt6 (sc-88) (1) (2) (3) (6) (5) (4) a bbreviated symbol : k33 (1) (2) ? 2 ? 2 ? 1 ? 1 (3) (5) (6) (4) (1) tr1 source(2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ? 1 esd protection diode ? 2 body diode downloaded from: http:///
2/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.a data sheet um6k33n ? electrical characteristics (ta = 25 ? c) ? symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss 50 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =50v, v gs =0v gate threshold voltage v gs (th) 0.3 - 1.0 v v ds =10v, i d =1ma -1 . 62 . 2 i d =200ma, v gs =4.5 v -1 . 72 . 4 i d =200ma, v gs =2.5 v -1 . 92 . 7 i d =100ma, v gs =1.8 v -2 . 04 . 0 i d =40ma, v gs =1.5v -2 . 47 . 2 i d =20ma, v gs =1.2v forward transfer admittance l y fs l 0.4 - - s i d =200ma, v ds =10v input capacitance c iss -2 5-p f v ds =10v output capacitance c oss -6-p f v gs =0v reverse transfer capacitance c rss -3-p f f = 1 m h z turn-on delay time t d(on) -4-n s i d =100ma, v dd 30 v rise time t r -6-n s v gs =4.5v turn-off delay time t d(off) -1 5-n s r l =300 ? fall time t f -5 5-n s r g =10 ? *pulsed conditions parameter static drain-source on-state resistance r ds (on) ? * ** * * ** * * * ? body diode characteristics (source-drain) (ta = 25 ? c) ? symbol min. typ. max. unit forward voltage v sd --1 . 2 v i s =200ma, v gs =0v *pulsed conditions parameter * downloaded from: http:///
3/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.a data sheet um6k33n ? electrical characteristic curves 0.1 1 10 100 0.01 0.1 1 ta=125c ta=75c ta=25c ta= -25c 0 0.1 0.2 0.3 0.4 0 0.2 0.4 0.6 0.8 1 v gs = 0.8v ta=25c pulsed v gs = 1.0v v gs = 4.5v v gs = 2.5v v gs =1.8v v gs =1.5v v gs = 1.2v 0.001 0.01 0.1 1 00 . 511 . 52 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 0.1 1 10 100 0.01 0.1 1 ta= 25c pulsed v gs =1.2v v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.5v 0.1 1 10 100 0.01 0.1 1 v gs = 2.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 100 0.01 0.1 1 v gs = 4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 100 0.01 0.1 1 ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 100 0.01 0.1 1 ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics ( i ) fig.2 typical output characteristics ( ii ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current ( i ) fig.5 static drain-source on-state resistance vs. drain current ( ii ) fig.6 static drain-source on-state resistance vs. drain current ( iii ) fig.7 static drain-source on-state resistance vs. drain current ( iv ) fig.9 static drain-source on-state resistance vs. drain current ( vi ) drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] gate-source voltage : v gs [v] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] static drain-source on-state resistance : rds(on)[ ?? ] drain-current : i d [a] fig.8 static drain-source on-state resistance vs. drain current ( v ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] drain current : i d [a] drain current : i d [a] v gs = 1.5v pulsed v gs = 1.8v pulsed v gs = 1.2v pulsed 0 0.1 0.2 0.3 0.4 024681 0 v gs =0.8v ta=25c pulsed v gs =1.0v v gs =1.2v v gs = 4.5v v gs = 2.5v v gs =1.8v v gs =1.5v downloaded from: http:///
4/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.a data sheet um6k33n 0.1 1 0.001 0.01 0.1 1 v ds = 10v pulsed ta= -25c ta=25c ta=75c ta=125c 0 1 2 3 4 5 6 7 8 9 10 051 0 ta=25c pulsed i d =200ma i d = 20ma 0.01 0.1 1 00 . 511 . 5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0.1 1 10 100 1000 0.01 0.1 1 10 100 c iss c oss c rss ta=25c f=1mhz v gs =0v 1 10 100 1000 0.01 0.1 1 t f t d(on) t d(off) ta=25c v dd =30v v gs =4.5v r g =10 ?? pulsed t r fig.11 reverse drain current vs. sourse-drain voltage fig.12 static drain-source on-state resistance vs. gate source voltage fig.14 typical capacitance vs. drain-source voltage fig.13 switching characteristics source current : i s [a] source-drain voltage : v sd [v] static drain-source on-state resistance : r ds (on)[ ?? ] gate-source voltage : v gs [v] switching time : t [ns] drain-current : i d [a] drain-source voltage : v ds [v] capacitance : c [pf] fig.10 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain-current : i d [a] downloaded from: http:///
5/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.a data sheet um6k33n ? measurement circuits ? ? notice ? this product might cause chip aging and breakdow n under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v d s d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) downloaded from: http:///
r1010 a www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted w ithout the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without not ice. the content specied herein is for the purpose of introducing rohm's produ cts (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specicat ions, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other i nformation contained herein illustrate the standard usage and operations of the products. the periph eral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in t his document. however, should you incur any damage arising from any inaccuracy or mis print of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical f unctions of and examples of application circuits for the products. rohm does not grant you, ex plicitly or implicitly, any license to use or exercise intellectual property or other ri ghts held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispu te arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automat ion equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation toler ant. while rohm always makes efforts to enhance the quality and reliability of its pr oducts, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measure s to guard against the possibility of physical injury, re or any other damage cause d in the event of the failure of any product, such as derating, redunda ncy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of th e prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, d evice or system which requires an extremely high level of reliability the failure or ma lfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medic al instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsib ility in any way for use of any of the products for the above special purposes. if a product is intended to be used for an y such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or techno logy specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be req uired to obtain a license or permit under the law. downloaded from: http:///
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